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Infineon Technologies BSC160N10NS3 G
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BSC160N10NS3 G
Manufacturers: Infineon Technologies
Qty: 6973
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Description: MOSFET N-KANAL POWER MOS
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:100 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:8.8 A
Rds On - Drain-Source Resistance:16 mOhms
Configuration:Single Quad Drain Triple Source
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:60 W
Mounting Style:SMD/SMT
Package / Case:TDSON-8
Packaging:Reel
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